PBSS5330X,135
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- Mfr.Part #
- PBSS5330X,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- PBSS5330X - 30V, 3A PNP LOW VCES
- Stock
- 356,759
- In Stock ：
- 356,759
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 30V
- Package / Case :
- TO-243AA
- Number of Pins :
- 4
- hFE Min :
- 200
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1.6W
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 30V
- Power - Max :
- 1.6W
- Terminal Form :
- Flat
- Base Part Number :
- PBSS5330
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Published :
- 2009
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 3A
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- -6V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 1A 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 3A
- JESD-30 Code :
- R-PSSO-F3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 30V
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 320mV
- Mount :
- Surface Mount
- Datasheets
- PBSS5330X,135
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5330X,135 Overview
In this device, the DC current gain is 175 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 320mV @ 300mA, 3A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
PBSS5330X,135 Features
the DC current gain for this device is 175 @ 1A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 100MHz
PBSS5330X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5330X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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