PBSS5330X,135
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- Mfr.Part #
- PBSS5330X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A SOT89
- Stock
- 356,759
- In Stock ：
- 356,759
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- PNP
- Base Part Number :
- PBSS5330
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 320mV
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- R-PSSO-F3
- Collector Base Voltage (VCBO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 3A
- Emitter Base Voltage (VEBO) :
- -6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 1A 2V
- Element Configuration :
- Single
- Published :
- 2009
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Package / Case :
- TO-243AA
- Power - Max :
- 1.6W
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1.6W
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Transistor Element Material :
- SILICON
- hFE Min :
- 200
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 3A
- Pin Count :
- 3
- Datasheets
- PBSS5330X,135
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5330X,135 Overview
In this device, the DC current gain is 175 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 320mV @ 300mA, 3A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
PBSS5330X,135 Features
the DC current gain for this device is 175 @ 1A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 100MHz
PBSS5330X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5330X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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