PBSS5330X,115
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- Mfr.Part #
- PBSS5330X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A SOT89
- Stock
- 47,436
- In Stock ：
- 47,436
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Length :
- 12.7mm
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Flat
- Width :
- 6.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 1A 2V
- Collector Base Voltage (VCBO) :
- 30V
- Base Part Number :
- PBSS5330
- Height :
- 6.35mm
- Power Dissipation :
- 1.6W
- Weight :
- 4.535924g
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1.6W
- Current - Collector Cutoff (Max) :
- 100nA
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Published :
- 2007
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 3A
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 30V
- Package / Case :
- TO-243AA
- Max Collector Current :
- 3A
- Number of Pins :
- 3
- Pin Count :
- 3
- Datasheets
- PBSS5330X,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5330X,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 175 @ 1A 2V.When VCE saturation is 320mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
PBSS5330X,115 Features
the DC current gain for this device is 175 @ 1A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS5330X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5330X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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