PBSS5330X,115
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- Mfr.Part #
- PBSS5330X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A SOT89
- Stock
- 47,436
- In Stock ：
- 47,436
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Flat
- Max Collector Current :
- 3A
- Width :
- 6.35mm
- Power Dissipation :
- 1.6W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 30V
- Case Connection :
- COLLECTOR
- Weight :
- 4.535924g
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Package / Case :
- TO-243AA
- Frequency :
- 100MHz
- Length :
- 12.7mm
- Base Part Number :
- PBSS5330
- Collector Emitter Voltage (VCEO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 1A 2V
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA
- Packaging :
- Tape and Reel (TR)
- Height :
- 6.35mm
- Max Power Dissipation :
- 1.6W
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 3A
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Published :
- 2007
- Datasheets
- PBSS5330X,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5330X,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 175 @ 1A 2V.When VCE saturation is 320mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
PBSS5330X,115 Features
the DC current gain for this device is 175 @ 1A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS5330X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5330X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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