PBSS5330X,115

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Mfr.Part #
PBSS5330X,115
Manufacturer
Nexperia
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 30V 3A SOT89
Stock
47,436
In Stock :
47,436

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
100MHz
Mounting Type :
Surface Mount
Number of Elements :
1
Package / Case :
TO-243AA
Operating Temperature :
150°C TJ
Length :
12.7mm
Frequency :
100MHz
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
320mV @ 300mA, 3A
Case Connection :
COLLECTOR
Transistor Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100nA
Collector Base Voltage (VCBO) :
30V
Radiation Hardening :
No
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
30V
Number of Pins :
3
Width :
6.35mm
Collector Emitter Voltage (VCEO) :
30V
Transistor Application :
SWITCHING
Max Power Dissipation :
1.6W
Gain Bandwidth Product :
100MHz
Mount :
Surface Mount
Max Breakdown Voltage :
30V
Factory Lead Time :
4 Weeks
Polarity/Channel Type :
PNP
Pin Count :
3
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
6V
Terminal Form :
Flat
Height :
6.35mm
Weight :
4.535924g
Transistor Element Material :
SILICON
Published :
2007
Max Collector Current :
3A
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
175 @ 1A 2V
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Base Part Number :
PBSS5330
Power Dissipation :
1.6W
Terminal Finish :
Tin (Sn)
Datasheets
PBSS5330X,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS5330X,115 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-243AA, Operating Temperature:150°C TJ, Number of Terminations:3, Number of Pins:3, Base Part Number:PBSS5330, PBSS5330X,115 pinout, PBSS5330X,115 datasheet PDF, PBSS5330X,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS5330X,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS5330X,115


PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

PBSS5330X,115 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 175 @ 1A 2V.When VCE saturation is 320mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 3A volts can be achieved.

PBSS5330X,115 Features


the DC current gain for this device is 175 @ 1A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


PBSS5330X,115 Applications


There are a lot of Nexperia USA Inc.
PBSS5330X,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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