PBSS5330X,115
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- Mfr.Part #
- PBSS5330X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A SOT89
- Stock
- 47,436
- In Stock ：
- 47,436
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Pin Count :
- 3
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Base Part Number :
- PBSS5330
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 1A 2V
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 30V
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Width :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- Length :
- 12.7mm
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Height :
- 6.35mm
- Max Collector Current :
- 3A
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1.6W
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-243AA
- Power Dissipation :
- 1.6W
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 3A
- Datasheets
- PBSS5330X,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5330X,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 175 @ 1A 2V.When VCE saturation is 320mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
PBSS5330X,115 Features
the DC current gain for this device is 175 @ 1A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS5330X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5330X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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