PBSS5330X,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

100MHz

Element Configuration :

Single

Height :

6.35mm

Package / Case :

TO-243AA

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Weight :

4.535924g

Max Breakdown Voltage :

30V

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

30V

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

175 @ 1A 2V

Terminal Form :

Flat

ECCN Code :

EAR99

Transition Frequency :

100MHz

Emitter Base Voltage (VEBO) :

6V

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

30V

Length :

12.7mm

Base Part Number :

PBSS5330

Width :

6.35mm

Mount :

Surface Mount

Pin Count :

3

Number of Elements :

1

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

30V

JESD-609 Code :

e3

Max Power Dissipation :

1.6W

Number of Terminations :

3

Max Collector Current :

3A

Number of Pins :

3

Published :

2007

Polarity/Channel Type :

PNP

Case Connection :

COLLECTOR

Transistor Type :

PNP

Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

320mV @ 300mA, 3A

Power Dissipation :

1.6W