PBSS5320T,215
- Mfr.Part #
- PBSS5320T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A TO236AB
- Stock
- 244,872
- In Stock :
- 244,872
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 20V
- Pin Count :
- 3
- Max Power Dissipation :
- 1.2W
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Published :
- 2003
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 1.2W
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- PBSS5320
- Number of Pins :
- 3
- Power - Max :
- 540mW
- Collector Base Voltage (VCBO) :
- 20V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 20V
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 3A
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Datasheets
- PBSS5320T,215

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5320T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 300mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5320T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5320T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5320T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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