PBSS5260QAZ
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- Mfr.Part #
- PBSS5260QAZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 60V 1.7A DFN1010D-3
- Stock
- 2,722
- In Stock ：
- 2,722
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2013
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 400mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1.7A 2V
- Collector Base Voltage (VCBO) :
- 60V
- Power - Max :
- 325mW
- Max Power Dissipation :
- 325mW
- Package / Case :
- 3-XDFN Exposed Pad
- Pin Count :
- 3
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 150MHz
- Max Collector Current :
- 1.7A
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Datasheets
- PBSS5260QAZ
PNP 150°C TJ 100nA ICBO 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
PBSS5260QAZ Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 1.7A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 50mA, 1A.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1.7A volts at its maximum.
PBSS5260QAZ Features
the DC current gain for this device is 30 @ 1.7A 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
PBSS5260QAZ Applications
There are a lot of Nexperia USA Inc.
PBSS5260QAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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