PBSS5260QAZ
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- Mfr.Part #
- PBSS5260QAZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 60V 1.7A DFN1010D-3
- Stock
- 2,722
- In Stock ：
- 2,722
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1.7A 2V
- Power - Max :
- 325mW
- Max Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 325mW
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 150MHz
- Package / Case :
- 3-XDFN Exposed Pad
- Transistor Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 400mV
- Radiation Hardening :
- No
- Published :
- 2013
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Max Collector Current :
- 1.7A
- Number of Pins :
- 3
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- PBSS5260QAZ
PBSS5260QAZ Documents
PNP 150°C TJ 100nA ICBO 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
PBSS5260QAZ Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 1.7A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 50mA, 1A.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1.7A volts at its maximum.
PBSS5260QAZ Features
the DC current gain for this device is 30 @ 1.7A 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
PBSS5260QAZ Applications
There are a lot of Nexperia USA Inc.
PBSS5260QAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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