PBSS5260PAPSX

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 1A 2V

Collector Emitter Voltage (VCEO) :

500mV

Polarity/Channel Type :

PNP

Configuration :

SEPARATE, 2 ELEMENTS

Published :

2015

Number of Terminations :

6

Number of Elements :

2

Collector Emitter Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Max Collector Current :

2A

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

6-UDFN Exposed Pad

JESD-30 Code :

S-PDSO-N6

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Transition Frequency :

100MHz

Reference Standard :

AEC-Q101; IEC-60134

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Max Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Transistor Type :

2 PNP (Dual)

Mount :

Surface Mount

Power - Max :

370mW

Frequency - Transition :

100MHz

Series :

Automotive, AEC-Q101

Max Power Dissipation :

370mW