PBSS5260PAP,115
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- Mfr.Part #
- PBSS5260PAP,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS5260PAP - SMALL
- Stock
- 15,223
- In Stock ：
- 15,223
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Collector Emitter Voltage (VCEO) :
- 60V
- Pin Count :
- 6
- Collector Emitter Saturation Voltage :
- -100mV
- Emitter Base Voltage (VEBO) :
- -7V
- JESD-609 Code :
- e3
- Package / Case :
- 6-UDFN Exposed Pad
- Number of Elements :
- 2
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 510mW
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2W
- Polarity :
- PNP
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 2A
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- PBSS5260PAP
- Max Power Dissipation :
- 1.45W
- Published :
- 2012
- Frequency :
- 100MHz
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- -3A
- Element Configuration :
- Dual
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Cut Tape (CT)
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 6
- hFE Min :
- 170
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- 2 PNP (Dual)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Datasheets
- PBSS5260PAP,115
PBSS5260PAP,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at
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