PBSS5250X,135
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- Mfr.Part #
- PBSS5250X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A SOT89
- Stock
- 444
- In Stock ：
- 444
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-F3
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Collector Base Voltage (VCBO) :
- 50V
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-243AA
- Pin Count :
- 3
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Max Collector Current :
- 2A
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 1W
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- PBSS5250
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Frequency :
- 100MHz
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PBSS5250X,135
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS5250X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS5250X,135 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5250X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5250X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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