PBSS5250T,215

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Mfr.Part #
PBSS5250T,215
Manufacturer
NXP Semiconductors
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
NOW NEXPERIA PBSS5250T - SMALL S
Stock
102,023
In Stock :
102,023

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Frequency :
100MHz
Package / Case :
TO-236-3, SC-59, SOT-23-3
Max Breakdown Voltage :
50V
Transition Frequency :
100MHz
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Number of Pins :
3
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 1A 2V
Collector Base Voltage (VCBO) :
50V
Published :
2009
Max Collector Current :
2A
Max Power Dissipation :
480mW
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Polarity/Channel Type :
PNP
Collector Emitter Voltage (VCEO) :
50V
Number of Elements :
1
Number of Terminations :
3
Current - Collector Cutoff (Max) :
100nA ICBO
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
300mV @ 100mA, 2A
Element Configuration :
Single
Pin Count :
3
Collector Emitter Breakdown Voltage :
50V
Operating Temperature :
150°C TJ
Transistor Type :
PNP
Terminal Position :
Dual
Transistor Application :
SWITCHING
Power Dissipation :
480mW
Packaging :
Tape and Reel (TR)
Factory Lead Time :
4 Weeks
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Gain Bandwidth Product :
100MHz
Base Part Number :
PBSS5250
RoHS Status :
ROHS3 Compliant
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS5250T,215 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:150°C TJ, Base Part Number:PBSS5250, PBSS5250T,215 pinout, PBSS5250T,215 datasheet PDF, PBSS5250T,215 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS5250T,215 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS5250T,215


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

PBSS5250T,215 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.

PBSS5250T,215 Features


the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 300mV @ 100mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


PBSS5250T,215 Applications


There are a lot of Nexperia USA Inc.
PBSS5250T,215 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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