PBSS5250T,215
- Mfr.Part #
- PBSS5250T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS5250T - SMALL S
- Stock
- 102,023
- In Stock :
- 102,023
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 50V
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2009
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 480mW
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 2A
- Element Configuration :
- Single
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 480mW
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- PBSS5250
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PBSS5250T,215
PBSS5250T,215 Documents

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5250T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS5250T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 300mV @ 100mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5250T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5250T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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