PBSS5250T,215
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- Mfr.Part #
- PBSS5250T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS5250T - SMALL S
- Stock
- 102,023
- In Stock ：
- 102,023
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Power Dissipation :
- 480mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 480mW
- Published :
- 2009
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Base Part Number :
- PBSS5250
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 2A
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 2A
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Transition Frequency :
- 100MHz
- Datasheets
- PBSS5250T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5250T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS5250T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 300mV @ 100mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5250T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5250T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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