PBSS5240Y,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2009

Gain Bandwidth Product :

100MHz

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

40V

Vce Saturation (Max) @ Ib, Ic :

350mV @ 200mA, 2A

Max Power Dissipation :

430mW

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

40V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 1A 2V

JESD-609 Code :

e3

Transistor Type :

PNP

Factory Lead Time :

4 Weeks

Number of Terminations :

6

Transition Frequency :

100MHz

Emitter Base Voltage (VEBO) :

5V

Current - Collector (Ic) (Max) :

2A

Max Collector Current :

2A

Mount :

Surface Mount

Terminal Position :

Dual

Element Configuration :

Single

Base Part Number :

PBSS5240

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Base Voltage (VCBO) :

40V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Pin Count :

6