PBSS5240XF
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- Mfr.Part #
- PBSS5240XF
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT89
- Stock
- 10,906
- In Stock ：
- 10,906
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gain Bandwidth Product :
- 150MHz
- Max Power Dissipation :
- 500mW
- Collector Emitter Breakdown Voltage :
- 40V
- Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2012
- Max Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Max Collector Current :
- 2A
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1mA 5V
- Base Part Number :
- PBSS5240
- Power Dissipation :
- 1.35W
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Power - Max :
- 500mW
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 140mV @ 5mA, 100mA
- hFE Min :
- 300
- Collector Emitter Saturation Voltage :
- -630mV
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Datasheets
- PBSS5240XF
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements TO-243AA Tape & Reel (TR) Surface Mount
PBSS5240XF Overview
In this device, the DC current gain is 300 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -630mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 140mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
PBSS5240XF Features
the DC current gain for this device is 300 @ 1mA 5V
a collector emitter saturation voltage of -630mV
the vce saturation(Max) is 140mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
PBSS5240XF Applications
There are a lot of Nexperia USA Inc.
PBSS5240XF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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