PBSS5240XF
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- Mfr.Part #
- PBSS5240XF
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT89
- Stock
- 10,906
- In Stock ：
- 10,906
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1.35W
- Collector Emitter Breakdown Voltage :
- 40V
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Published :
- 2012
- Gain Bandwidth Product :
- 150MHz
- Collector Base Voltage (VCBO) :
- 40V
- Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1mA 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 40V
- Number of Pins :
- 4
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -630mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-243AA
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Max Power Dissipation :
- 500mW
- hFE Min :
- 300
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- PBSS5240
- Max Collector Current :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 140mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Power - Max :
- 500mW
- Element Configuration :
- Single
- Datasheets
- PBSS5240XF
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements TO-243AA Tape & Reel (TR) Surface Mount
PBSS5240XF Overview
In this device, the DC current gain is 300 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -630mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 140mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
PBSS5240XF Features
the DC current gain for this device is 300 @ 1mA 5V
a collector emitter saturation voltage of -630mV
the vce saturation(Max) is 140mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
PBSS5240XF Applications
There are a lot of Nexperia USA Inc.
PBSS5240XF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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