PBSS5240XF
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- Mfr.Part #
- PBSS5240XF
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT89
- Stock
- 10,906
- In Stock ：
- 10,906
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -630mV
- Number of Pins :
- 4
- Gain Bandwidth Product :
- 150MHz
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 140mV @ 5mA, 100mA
- Max Collector Current :
- 2A
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- PBSS5240
- hFE Min :
- 300
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1mA 5V
- Frequency :
- 150MHz
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- 40V
- Max Breakdown Voltage :
- 40V
- Power - Max :
- 500mW
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 500mW
- Package / Case :
- TO-243AA
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2012
- Number of Elements :
- 1
- Power Dissipation :
- 1.35W
- Datasheets
- PBSS5240XF
PBSS5240XF Documents
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements TO-243AA Tape & Reel (TR) Surface Mount
PBSS5240XF Overview
In this device, the DC current gain is 300 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -630mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 140mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
PBSS5240XF Features
the DC current gain for this device is 300 @ 1mA 5V
a collector emitter saturation voltage of -630mV
the vce saturation(Max) is 140mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
PBSS5240XF Applications
There are a lot of Nexperia USA Inc.
PBSS5240XF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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