PBSS5240V,115
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- Mfr.Part #
- PBSS5240V,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT666
- Stock
- 31,439
- In Stock ：
- 31,439
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PBSS5240
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Number of Terminations :
- 6
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Power Dissipation :
- 1.2W
- Transition Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 1.8A
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 40V
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 1.2W
- Package / Case :
- SOT-563, SOT-666
- Vce Saturation (Max) @ Ib, Ic :
- 530mV @ 200mA, 2A
- Transistor Application :
- SWITCHING
- Frequency :
- 150MHz
- Pin Count :
- 6
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Pins :
- 6
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- Power - Max :
- 900mW
- Published :
- 2009
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 40V
- Transistor Type :
- PNP
- Datasheets
- PBSS5240V,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS5240V,115 Overview
This device has a DC current gain of 300 @ 100mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 1.8A volts.
PBSS5240V,115 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 530mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS5240V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5240V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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