PBSS5230QAZ

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Mfr.Part #
PBSS5230QAZ
Manufacturer
NXP Semiconductors
Package / Case
3-XDFN Exposed Pad
Datasheet
Download
Description
NEXPERIA PBSS5230QA - 30 V, 2 A
Stock
23,057
In Stock :
23,057

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 2A 2V
Vce Saturation (Max) @ Ib, Ic :
210mV @ 50mA, 1A
Current - Collector Cutoff (Max) :
100nA ICBO
Package / Case :
3-XDFN Exposed Pad
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
PNP
Current - Collector (Ic) (Max) :
2A
Operating Temperature :
150°C TJ
Factory Lead Time :
4 Weeks
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
325mW
Published :
2013
Voltage - Collector Emitter Breakdown (Max) :
30V
Frequency - Transition :
170MHz
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Datasheets
PBSS5230QAZ
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS5230QAZ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:3-XDFN Exposed Pad, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, PBSS5230QAZ pinout, PBSS5230QAZ datasheet PDF, PBSS5230QAZ amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS5230QAZ ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS5230QAZ


PNP 150°C TJ 100nA ICBO 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount

PBSS5230QAZ Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

PBSS5230QAZ Features


the DC current gain for this device is 60 @ 2A 2V
the vce saturation(Max) is 210mV @ 50mA, 1A


PBSS5230QAZ Applications


There are a lot of Nexperia USA Inc.
PBSS5230QAZ applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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