PBSS5230PAP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Packaging :

Cut Tape (CT)

Collector Base Voltage (VCBO) :

30V

Element Configuration :

Dual

Radiation Hardening :

No

Gain Bandwidth Product :

95MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Frequency :

95MHz

Power - Max :

510mW

Factory Lead Time :

20 Weeks

Operating Temperature :

150°C TJ

Transistor Type :

2 PNP (Dual)

hFE Min :

260

Emitter Base Voltage (VEBO) :

-7V

Polarity :

PNP

Collector Emitter Saturation Voltage :

-75mV

Collector Emitter Voltage (VCEO) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

200mW

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Max Collector Current :

-3A

Vce Saturation (Max) @ Ib, Ic :

420mv @ 100mA, 2A

Current - Collector (Ic) (Max) :

2A

Pin Count :

6

Published :

2013

Mount :

Surface Mount

Number of Elements :

2

Package / Case :

6-UDFN Exposed Pad

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 1A 2V

Max Power Dissipation :

1.45W

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)