PBSS5160V,115
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- Mfr.Part #
- PBSS5160V,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.9A SOT666
- Stock
- 3,576
- In Stock ：
- 3,576
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Frequency :
- 220MHz
- Package / Case :
- SOT-563, SOT-666
- Base Part Number :
- PBSS5160
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 220MHz
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Pin Count :
- 6
- Collector Base Voltage (VCBO) :
- 80V
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 220MHz
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 6
- Transistor Type :
- PNP
- Max Power Dissipation :
- 500mW
- Terminal Position :
- Dual
- Power Dissipation :
- 500mW
- Max Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Terminal Finish :
- Tin (Sn)
- Current - Collector (Ic) (Max) :
- 900mA
- Published :
- 2009
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Mounting Type :
- Surface Mount
- Number of Pins :
- 6
- Terminal Form :
- Flat
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- PBSS5160V,115
PBSS5160V,115 Documents
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS5160V,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 330mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 220MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.
PBSS5160V,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
PBSS5160V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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