PBSS5160V,115
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- Mfr.Part #
- PBSS5160V,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.9A SOT666
- Stock
- 3,576
- In Stock ：
- 3,576
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 6
- Max Power Dissipation :
- 500mW
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Frequency :
- 220MHz
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 60V
- Terminal Position :
- Dual
- Current - Collector (Ic) (Max) :
- 900mA
- Gain Bandwidth Product :
- 220MHz
- Number of Terminations :
- 6
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Pin Count :
- 6
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Transition Frequency :
- 220MHz
- Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- PBSS5160
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Transistor Type :
- PNP
- Package / Case :
- SOT-563, SOT-666
- Published :
- 2009
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 80V
- Max Collector Current :
- 1A
- Datasheets
- PBSS5160V,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS5160V,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 330mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 220MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.
PBSS5160V,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
PBSS5160V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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