PBSS5160U,115
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- Mfr.Part #
- PBSS5160U,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.7A SOT323
- Stock
- 143,036
- In Stock ：
- 143,036
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 415mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- 150°C TJ
- Height :
- 6.35mm
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 220MHz
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- PBSS5160
- Max Breakdown Voltage :
- 60V
- Frequency :
- 185MHz
- Weight :
- 4.535924g
- Published :
- 2008
- Transistor Element Material :
- SILICON
- Width :
- 6.35mm
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 1A
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- -5V
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- hFE Min :
- 200
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Number of Pins :
- 3
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- PNP
- Power Dissipation :
- 415mW
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 185MHz
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.35mm
- Max Collector Current :
- 700mA
- Datasheets
- PBSS5160U,115
PBSS5160U,115 Documents
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PBSS5160U,115 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 340mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 700mA volts is possible.
PBSS5160U,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160U,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160U,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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