PBSS5160U,115
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- Mfr.Part #
- PBSS5160U,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.7A SOT323
- Stock
- 143,036
- In Stock ：
- 143,036
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 60V
- Pin Count :
- 3
- Radiation Hardening :
- No
- Power Dissipation :
- 415mW
- Gain Bandwidth Product :
- 185MHz
- hFE Min :
- 200
- Base Part Number :
- PBSS5160
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Surface Mount
- Frequency :
- 185MHz
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 415mW
- Transistor Type :
- PNP
- Length :
- 6.35mm
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Package / Case :
- SC-70, SOT-323
- Terminal Finish :
- Tin (Sn)
- Width :
- 6.35mm
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 220MHz
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 1A
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Height :
- 6.35mm
- Element Configuration :
- Single
- Max Collector Current :
- 700mA
- Datasheets
- PBSS5160U,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PBSS5160U,115 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 340mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 700mA volts is possible.
PBSS5160U,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160U,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160U,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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