PBSS5160U,115
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- Mfr.Part #
- PBSS5160U,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.7A SOT323
- Stock
- 143,036
- In Stock ：
- 143,036
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 415mW
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 700mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 1A
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 3
- Max Power Dissipation :
- 415mW
- Width :
- 6.35mm
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 60V
- Transition Frequency :
- 220MHz
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Length :
- 6.35mm
- Height :
- 6.35mm
- Published :
- 2008
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Frequency :
- 185MHz
- Gain Bandwidth Product :
- 185MHz
- Collector Base Voltage (VCBO) :
- 80V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Package / Case :
- SC-70, SOT-323
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- PBSS5160
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- hFE Min :
- 200
- Datasheets
- PBSS5160U,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PBSS5160U,115 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 340mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 700mA volts is possible.
PBSS5160U,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160U,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160U,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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