PBSS5160U,115
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- Mfr.Part #
- PBSS5160U,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.7A SOT323
- Stock
- 143,036
- In Stock ：
- 143,036
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-70, SOT-323
- Published :
- 2008
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 60V
- Frequency :
- 185MHz
- Transition Frequency :
- 220MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 1A
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 415mW
- Number of Elements :
- 1
- Height :
- 6.35mm
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Number of Pins :
- 3
- Base Part Number :
- PBSS5160
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Power Dissipation :
- 415mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Max Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Base Voltage (VCBO) :
- 80V
- Max Collector Current :
- 700mA
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 185MHz
- Length :
- 6.35mm
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA
- hFE Min :
- 200
- Width :
- 6.35mm
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Datasheets
- PBSS5160U,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PBSS5160U,115 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 340mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 700mA volts is possible.
PBSS5160U,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160U,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160U,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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