PBSS5160T,215
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- Mfr.Part #
- PBSS5160T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A TO236AB
- Stock
- 221,402
- In Stock ：
- 221,402
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Power Dissipation :
- 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Gain Bandwidth Product :
- 220MHz
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Frequency :
- 220MHz
- Max Collector Current :
- 1A
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 270mW
- Transistor Type :
- PNP
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- -5V
- Published :
- 2009
- Length :
- 6.35mm
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 60V
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Base Part Number :
- PBSS5160
- Height :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 220MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Width :
- 6.35mm
- Mount :
- Surface Mount
- hFE Min :
- 200
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 60V
- Power - Max :
- 400mW
- Datasheets
- PBSS5160T,215
PBSS5160T,215 Documents
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5160T,215 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 330mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
PBSS5160T,215 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5160T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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