PBSS5160T,215
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- Mfr.Part #
- PBSS5160T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A TO236AB
- Stock
- 221,402
- In Stock ：
- 221,402
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 1.25W
- Transition Frequency :
- 220MHz
- Frequency :
- 220MHz
- Number of Pins :
- 3
- Power - Max :
- 400mW
- Number of Terminations :
- 3
- Height :
- 6.35mm
- Mount :
- Surface Mount
- Published :
- 2009
- Length :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 60V
- Base Part Number :
- PBSS5160
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Weight :
- 4.535924g
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -5V
- Max Power Dissipation :
- 270mW
- Width :
- 6.35mm
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 60V
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 220MHz
- hFE Min :
- 200
- Datasheets
- PBSS5160T,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5160T,215 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 330mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
PBSS5160T,215 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5160T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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