PBSS5160T,215
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- Mfr.Part #
- PBSS5160T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A TO236AB
- Stock
- 221,402
- In Stock ：
- 221,402
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 270mW
- Current - Collector Cutoff (Max) :
- 100nA
- Weight :
- 4.535924g
- Frequency :
- 220MHz
- Power Dissipation :
- 1.25W
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 1A
- hFE Min :
- 200
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.35mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Width :
- 6.35mm
- Power - Max :
- 400mW
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Max Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Transistor Type :
- PNP
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 220MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 220MHz
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 6.35mm
- Pin Count :
- 3
- Base Part Number :
- PBSS5160
- Datasheets
- PBSS5160T,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5160T,215 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 330mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
PBSS5160T,215 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5160T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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