PBSS5160PAPSX

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-30 Code :

S-PDSO-N6

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Form :

NO LEAD

Collector Emitter Breakdown Voltage :

60V

Max Collector Current :

1A

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Published :

2014

Power - Max :

370mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-UDFN Exposed Pad

Number of Elements :

2

Max Power Dissipation :

370mW

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Packaging :

Cut Tape (CT)

Configuration :

SEPARATE, 2 ELEMENTS

Factory Lead Time :

8 Weeks

Number of Terminations :

6

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

550mV

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

550mV @ 50mA, 1A

Frequency - Transition :

125MHz

Mount :

Surface Mount

Transition Frequency :

125MHz

Polarity/Channel Type :

PNP

Max Breakdown Voltage :

60V

Reference Standard :

AEC-Q101; IEC-60134

RoHS Status :

ROHS3 Compliant