PBSS5160PAPSX

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Package / Case :

6-UDFN Exposed Pad

Mount :

Surface Mount

Max Collector Current :

1A

Packaging :

Cut Tape (CT)

Frequency - Transition :

125MHz

Published :

2014

Collector Emitter Voltage (VCEO) :

550mV

Configuration :

SEPARATE, 2 ELEMENTS

Operating Temperature :

150°C TJ

Transition Frequency :

125MHz

Case Connection :

COLLECTOR

Reference Standard :

AEC-Q101; IEC-60134

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

Transistor Type :

2 PNP (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

550mV @ 50mA, 1A

Mounting Type :

Surface Mount

Polarity/Channel Type :

PNP

Terminal Form :

NO LEAD

Max Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

370mW

Number of Elements :

2

Collector Emitter Breakdown Voltage :

60V

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Power - Max :

370mW

JESD-30 Code :

S-PDSO-N6