PBSS5160PAP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

Mount :

Surface Mount

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

Published :

2013

Vce Saturation (Max) @ Ib, Ic :

340mV @ 100mA, 1A

Pin Count :

6

Max Power Dissipation :

1.45W

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

1A

Packaging :

Cut Tape (CT)

Max Collector Current :

-1.5A

Gain Bandwidth Product :

125MHz

Package / Case :

6-UDFN Exposed Pad

Emitter Base Voltage (VEBO) :

-7V

Power - Max :

510mW

Collector Emitter Saturation Voltage :

-125mV

Terminal Finish :

Tin (Sn)

Polarity :

PNP

hFE Min :

170

Voltage - Collector Emitter Breakdown (Max) :

60V

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

-60V

Element Configuration :

Dual

Transistor Type :

2 PNP (Dual)

Collector Emitter Voltage (VCEO) :

-60V

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Current - Collector Cutoff (Max) :

100nA ICBO