PBSS5140U,135
- Mfr.Part #
- PBSS5140U,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A SOT323
- Stock
- 47,999
- In Stock :
- 47,999
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Gain Bandwidth Product :
- 150MHz
- Additional Feature :
- High Reliability
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Frequency :
- 150MHz
- Base Part Number :
- PBSS5140
- Element Configuration :
- Single
- Power Dissipation :
- 350mW
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- Transition Frequency :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Collector Base Voltage (VCBO) :
- 40V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Max Power Dissipation :
- 350mW
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Max Breakdown Voltage :
- 40V
- Datasheets
- PBSS5140U,135

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PBSS5140U,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 1A volts at its maximum.
PBSS5140U,135 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS5140U,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5140U,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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