PBSS5140U,135
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- Mfr.Part #
- PBSS5140U,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A SOT323
- Stock
- 47,999
- In Stock ：
- 47,999
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 350mW
- Collector Emitter Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Transition Frequency :
- 150MHz
- Package / Case :
- SC-70, SOT-323
- Max Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Collector Base Voltage (VCBO) :
- 40V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Additional Feature :
- High Reliability
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Frequency :
- 150MHz
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 150MHz
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 40V
- Power Dissipation :
- 350mW
- Base Part Number :
- PBSS5140
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Datasheets
- PBSS5140U,135
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PBSS5140U,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 1A volts at its maximum.
PBSS5140U,135 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS5140U,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5140U,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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