PBSS5140T,215
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- Mfr.Part #
- PBSS5140T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO236AB
- Stock
- 149,002
- In Stock ：
- 149,002
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 150MHz
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Frequency - Transition :
- 150MHz
- Factory Lead Time :
- 4 Weeks
- Configuration :
- Single
- Base Part Number :
- PBSS5140
- Current - Collector (Ic) (Max) :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Power - Max :
- 450mW
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Pin Count :
- 3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2001
- Datasheets
- PBSS5140T,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5140T,215 Overview
In this device, the DC current gain is 300 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.
PBSS5140T,215 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 150MHz
PBSS5140T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5140T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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