PBSS5130T,215
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- Mfr.Part #
- PBSS5130T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A TO236AB
- Stock
- 184,173
- In Stock ：
- 184,173
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 6.35mm
- Base Part Number :
- PBSS5130
- Emitter Base Voltage (VEBO) :
- -5V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Transition Frequency :
- 200MHz
- Terminal Finish :
- Tin (Sn)
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2013
- Length :
- 6.35mm
- Collector Base Voltage (VCBO) :
- 30V
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Current :
- 15A
- Factory Lead Time :
- 4 Weeks
- Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 6.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 260 @ 500mA 2V
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 50mA, 1A
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 480mW
- Number of Pins :
- 3
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Frequency :
- 200MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 200MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 480mW
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Polarity/Channel Type :
- PNP
- hFE Min :
- 300
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- PBSS5130T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5130T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 260 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 225mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1A volts.
PBSS5130T,215 Features
the DC current gain for this device is 260 @ 500mA 2V
the vce saturation(Max) is 225mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
PBSS5130T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5130T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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