PBSS5130T,215
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- Mfr.Part #
- PBSS5130T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A TO236AB
- Stock
- 184,173
- In Stock ：
- 184,173
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Published :
- 2013
- Length :
- 6.35mm
- Max Breakdown Voltage :
- 30V
- Power Dissipation :
- 480mW
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Height :
- 6.35mm
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 50mA, 1A
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- hFE Min :
- 300
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 200MHz
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 260 @ 500mA 2V
- Terminal Position :
- Dual
- Current :
- 15A
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 6.35mm
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- -5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- PBSS5130
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 200MHz
- Max Power Dissipation :
- 480mW
- Transition Frequency :
- 200MHz
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Voltage :
- 30V
- Max Collector Current :
- 1A
- Radiation Hardening :
- No
- Datasheets
- PBSS5130T,215
PBSS5130T,215 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5130T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 260 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 225mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1A volts.
PBSS5130T,215 Features
the DC current gain for this device is 260 @ 500mA 2V
the vce saturation(Max) is 225mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
PBSS5130T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5130T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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