PBSS5130QAZ
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- Mfr.Part #
- PBSS5130QAZ
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR
- Stock
- 9,190
- In Stock ：
- 9,190
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 170MHz
- Base Part Number :
- PBSS5130
- Packaging :
- Tape and Reel (TR)
- Current - Collector (Ic) (Max) :
- 1A
- Power - Max :
- 325mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Package / Case :
- 3-XDFN Exposed Pad
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 130 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 100mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2013
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PBSS5130QAZ
PNP 150°C TJ 100nA ICBO 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
PBSS5130QAZ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 130 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 240mV @ 100mA, 1A.Device displays Collector Emitter Breakdown (30V maximal voltage).
PBSS5130QAZ Features
the DC current gain for this device is 130 @ 1A 2V
the vce saturation(Max) is 240mV @ 100mA, 1A
PBSS5130QAZ Applications
There are a lot of Nexperia USA Inc.
PBSS5130QAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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