PBSS5130QAZ

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Mfr.Part #
PBSS5130QAZ
Manufacturer
Nexperia
Package / Case
3-XDFN Exposed Pad
Datasheet
Download
Description
TRANS PNP 30V 1A DFN1010D-3
Stock
27,439
In Stock :
27,439

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Published :
2013
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
3-XDFN Exposed Pad
Base Part Number :
PBSS5130
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
240mV @ 100mA, 1A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power - Max :
325mW
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
100nA ICBO
Frequency - Transition :
170MHz
Voltage - Collector Emitter Breakdown (Max) :
30V
Current - Collector (Ic) (Max) :
1A
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Factory Lead Time :
4 Weeks
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
130 @ 1A 2V
Datasheets
PBSS5130QAZ
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS5130QAZ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:3-XDFN Exposed Pad, Base Part Number:PBSS5130, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, PBSS5130QAZ pinout, PBSS5130QAZ datasheet PDF, PBSS5130QAZ amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS5130QAZ ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS5130QAZ


PNP 150°C TJ 100nA ICBO 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount

PBSS5130QAZ Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 130 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 240mV @ 100mA, 1A.Device displays Collector Emitter Breakdown (30V maximal voltage).

PBSS5130QAZ Features


the DC current gain for this device is 130 @ 1A 2V
the vce saturation(Max) is 240mV @ 100mA, 1A


PBSS5130QAZ Applications


There are a lot of Nexperia USA Inc.
PBSS5130QAZ applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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