PBSS5130PAP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

1.45W

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

170 @ 500mA 2V

Published :

2012

Package / Case :

6-UDFN Exposed Pad

Mount :

Surface Mount

Current - Collector (Ic) (Max) :

1A

Packaging :

Cut Tape (CT)

Operating Temperature :

150°C TJ

Base Part Number :

PBSS5130

Collector Emitter Voltage (VCEO) :

-30V

Polarity :

PNP

Collector Emitter Saturation Voltage :

-85mV

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

-7V

Vce Saturation (Max) @ Ib, Ic :

280mV @ 50mA, 1A

Transistor Type :

2 PNP (Dual)

Power - Max :

510mW

JESD-609 Code :

e3

Gain Bandwidth Product :

125MHz

Pin Count :

6

hFE Min :

250

Voltage - Collector Emitter Breakdown (Max) :

30V

Collector Base Voltage (VCBO) :

-30V

Factory Lead Time :

20 Weeks

Number of Pins :

6

Max Collector Current :

-2A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount