PBSS5130PAP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Gain Bandwidth Product :

125MHz

Collector Base Voltage (VCBO) :

-30V

Element Configuration :

Dual

Package / Case :

6-UDFN Exposed Pad

Terminal Finish :

Tin (Sn)

Factory Lead Time :

20 Weeks

Power - Max :

510mW

Collector Emitter Voltage (VCEO) :

-30V

Pin Count :

6

Current - Collector Cutoff (Max) :

100nA ICBO

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

-7V

JESD-609 Code :

e3

Published :

2012

Mount :

Surface Mount

Number of Pins :

6

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

170 @ 500mA 2V

Max Power Dissipation :

1.45W

Transistor Type :

2 PNP (Dual)

Packaging :

Cut Tape (CT)

Voltage - Collector Emitter Breakdown (Max) :

30V

Polarity :

PNP

Current - Collector (Ic) (Max) :

1A

hFE Min :

250

Vce Saturation (Max) @ Ib, Ic :

280mV @ 50mA, 1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Max Collector Current :

-2A

Base Part Number :

PBSS5130

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

-85mV