PBSS5120T,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

6.35mm

Frequency :

100MHz

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

PNP

Width :

6.35mm

Max Power Dissipation :

480mW

Collector Base Voltage (VCBO) :

20V

ECCN Code :

EAR99

Max Breakdown Voltage :

200V

Collector Emitter Voltage (VCEO) :

20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

PNP

Element Configuration :

Single

Number of Pins :

3

Emitter Base Voltage (VEBO) :

-5V

hFE Min :

300

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 1A

Packaging :

Tape and Reel (TR)

Length :

6.35mm

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

4.535924g

Max Collector Current :

1A

Transition Frequency :

100MHz

Factory Lead Time :

4 Weeks

Power Dissipation :

480mW

Transistor Application :

SWITCHING

Pin Count :

3

Base Part Number :

PBSS5120

Terminal Form :

Gull wing

Gain Bandwidth Product :

100MHz

JESD-609 Code :

e3

Number of Elements :

1

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 500mA 2V

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Position :

Dual

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Lead Free

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

20V