PBSS5120T,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Base Part Number :

PBSS5120

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

20V

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 1A

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

100MHz

Weight :

4.535924g

Power Dissipation :

480mW

Collector Emitter Breakdown Voltage :

20V

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 500mA 2V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mount :

Surface Mount

Radiation Hardening :

No

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Pin Count :

3

Mounting Type :

Surface Mount

Element Configuration :

Single

Transistor Type :

PNP

Max Breakdown Voltage :

200V

Height :

6.35mm

Packaging :

Tape and Reel (TR)

Length :

6.35mm

Width :

6.35mm

Transition Frequency :

100MHz

Number of Pins :

3

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

-5V

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Number of Elements :

1

Factory Lead Time :

4 Weeks

Operating Temperature :

150°C TJ

Published :

2003

Collector Base Voltage (VCBO) :

20V

Max Power Dissipation :

480mW

hFE Min :

300

Max Collector Current :

1A

Frequency :

100MHz