PBSS4620PA,115

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Mfr.Part #
PBSS4620PA,115
Manufacturer
NXP Semiconductors
Package / Case
3-PowerUDFN
Datasheet
Download
Description
NEXPERIA PBSS4620PA - SMALL SIGN
Stock
2,697
In Stock :
2,697

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2010
Number of Terminations :
3
Mounting Type :
Surface Mount
Transistor Type :
NPN
Radiation Hardening :
No
Number of Pins :
3
Max Collector Current :
6A
Current - Collector Cutoff (Max) :
100nA
Vce Saturation (Max) @ Ib, Ic :
275mV @ 300mA, 6A
Pin Count :
3
Collector Emitter Breakdown Voltage :
20V
Operating Temperature :
150°C TJ
Terminal Position :
Dual
Power - Max :
2.1W
Transition Frequency :
80MHz
Case Connection :
COLLECTOR
Max Breakdown Voltage :
20V
Collector Base Voltage (VCBO) :
20V
Max Power Dissipation :
2.1W
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
20V
Base Part Number :
PBSS4620
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
6V
Package / Case :
3-PowerUDFN
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Polarity/Channel Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
200
Mount :
Surface Mount
Element Configuration :
Single
Gain Bandwidth Product :
80MHz
Terminal Finish :
Tin (Sn)
Factory Lead Time :
8 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
260 @ 2A 2V
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Datasheets
PBSS4620PA,115
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4620PA,115 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:150°C TJ, Base Part Number:PBSS4620, Package / Case:3-PowerUDFN, PBSS4620PA,115 pinout, PBSS4620PA,115 datasheet PDF, PBSS4620PA,115 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4620PA,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS4620PA,115


NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount

PBSS4620PA,115 Overview


In this device, the DC current gain is 260 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 275mV @ 300mA, 6A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.80MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 6A volts.

PBSS4620PA,115 Features


the DC current gain for this device is 260 @ 2A 2V
the vce saturation(Max) is 275mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 80MHz


PBSS4620PA,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4620PA,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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