PBSS4620PA,115
- Mfr.Part #
- PBSS4620PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NEXPERIA PBSS4620PA - SMALL SIGN
- Stock
- 2,697
- In Stock :
- 2,697
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 80MHz
- Collector Base Voltage (VCBO) :
- 20V
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 275mV @ 300mA, 6A
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Max Collector Current :
- 6A
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Package / Case :
- 3-PowerUDFN
- Max Power Dissipation :
- 2.1W
- Base Part Number :
- PBSS4620
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 260 @ 2A 2V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Published :
- 2010
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 20V
- Gain Bandwidth Product :
- 80MHz
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Power - Max :
- 2.1W
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 20V
- hFE Min :
- 200
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Datasheets
- PBSS4620PA,115

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS4620PA,115 Overview
In this device, the DC current gain is 260 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 275mV @ 300mA, 6A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.80MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 6A volts.
PBSS4620PA,115 Features
the DC current gain for this device is 260 @ 2A 2V
the vce saturation(Max) is 275mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 80MHz
PBSS4620PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4620PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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