PBSS4620PA,115
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- Mfr.Part #
- PBSS4620PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NEXPERIA PBSS4620PA - SMALL SIGN
- Stock
- 2,697
- In Stock ：
- 2,697
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 20V
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 260 @ 2A 2V
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- Transition Frequency :
- 80MHz
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Power - Max :
- 2.1W
- Mount :
- Surface Mount
- Max Collector Current :
- 6A
- Max Power Dissipation :
- 2.1W
- Transistor Application :
- SWITCHING
- Published :
- 2010
- Gain Bandwidth Product :
- 80MHz
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 20V
- Number of Terminations :
- 3
- hFE Min :
- 200
- Collector Base Voltage (VCBO) :
- 20V
- Base Part Number :
- PBSS4620
- Collector Emitter Voltage (VCEO) :
- 20V
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 275mV @ 300mA, 6A
- Package / Case :
- 3-PowerUDFN
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Datasheets
- PBSS4620PA,115
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS4620PA,115 Overview
In this device, the DC current gain is 260 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 275mV @ 300mA, 6A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.80MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 6A volts.
PBSS4620PA,115 Features
the DC current gain for this device is 260 @ 2A 2V
the vce saturation(Max) is 275mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 80MHz
PBSS4620PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4620PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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