PBSS4620PA,115
- Mfr.Part #
- PBSS4620PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NEXPERIA PBSS4620PA - SMALL SIGN
- Stock
- 2,697
- In Stock :
- 2,697
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2010
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Max Collector Current :
- 6A
- Current - Collector Cutoff (Max) :
- 100nA
- Vce Saturation (Max) @ Ib, Ic :
- 275mV @ 300mA, 6A
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 20V
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Power - Max :
- 2.1W
- Transition Frequency :
- 80MHz
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 20V
- Collector Base Voltage (VCBO) :
- 20V
- Max Power Dissipation :
- 2.1W
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 20V
- Base Part Number :
- PBSS4620
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- 3-PowerUDFN
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 200
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 80MHz
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 260 @ 2A 2V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Datasheets
- PBSS4620PA,115

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS4620PA,115 Overview
In this device, the DC current gain is 260 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 275mV @ 300mA, 6A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.80MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 6A volts.
PBSS4620PA,115 Features
the DC current gain for this device is 260 @ 2A 2V
the vce saturation(Max) is 275mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 80MHz
PBSS4620PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4620PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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