PBSS4620PA,115
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- Mfr.Part #
- PBSS4620PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NEXPERIA PBSS4620PA - SMALL SIGN
- Stock
- 2,697
- In Stock ：
- 2,697
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2010
- Element Configuration :
- Single
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 80MHz
- Max Breakdown Voltage :
- 20V
- Max Collector Current :
- 6A
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 260 @ 2A 2V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 20V
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 275mV @ 300mA, 6A
- hFE Min :
- 200
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Package / Case :
- 3-PowerUDFN
- Transition Frequency :
- 80MHz
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 2.1W
- Collector Emitter Breakdown Voltage :
- 20V
- Collector Base Voltage (VCBO) :
- 20V
- Base Part Number :
- PBSS4620
- Power - Max :
- 2.1W
- Datasheets
- PBSS4620PA,115
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS4620PA,115 Overview
In this device, the DC current gain is 260 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 275mV @ 300mA, 6A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.80MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 6A volts.
PBSS4620PA,115 Features
the DC current gain for this device is 260 @ 2A 2V
the vce saturation(Max) is 275mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 80MHz
PBSS4620PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4620PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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