PBSS4560PA,115
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- Mfr.Part #
- PBSS4560PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS NPN 60V 6A 3HUSON
- Stock
- 8,766
- In Stock ：
- 8,766
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PBSS4560
- Max Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2A 2V
- hFE Min :
- 70
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 2.1W
- Gain Bandwidth Product :
- 150MHz
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Frequency :
- 150MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 150MHz
- Terminal Position :
- Dual
- Max Collector Current :
- 6A
- Power Dissipation :
- 2.1W
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 300mA, 6A
- Published :
- 2007
- Transistor Type :
- NPN
- Package / Case :
- 3-PowerUDFN
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- PBSS4560PA,115
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS4560PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2A 2V.When VCE saturation is 290mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
PBSS4560PA,115 Features
the DC current gain for this device is 210 @ 2A 2V
the vce saturation(Max) is 290mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
PBSS4560PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4560PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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