PBSS4560PA,115
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- Mfr.Part #
- PBSS4560PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS NPN 60V 6A 3HUSON
- Stock
- 8,766
- In Stock ：
- 8,766
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Base Part Number :
- PBSS4560
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 300mA, 6A
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 60V
- Transition Frequency :
- 150MHz
- Max Collector Current :
- 6A
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Frequency :
- 150MHz
- Package / Case :
- 3-PowerUDFN
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 150MHz
- Power Dissipation :
- 2.1W
- Transistor Type :
- NPN
- Number of Pins :
- 3
- hFE Min :
- 70
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2A 2V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Max Power Dissipation :
- 2.1W
- Current - Collector Cutoff (Max) :
- 100nA
- Factory Lead Time :
- 8 Weeks
- Datasheets
- PBSS4560PA,115
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS4560PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2A 2V.When VCE saturation is 290mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
PBSS4560PA,115 Features
the DC current gain for this device is 210 @ 2A 2V
the vce saturation(Max) is 290mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
PBSS4560PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4560PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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