PBSS4480X,135
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- Mfr.Part #
- PBSS4480X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- PBSS4480X - 80 V, 4 A NPN LOW VC
- Stock
- 3,684
- In Stock ：
- 3,684
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 250
- JESD-609 Code :
- e3
- Power - Max :
- 1.6W
- Number of Terminations :
- 3
- Transition Frequency :
- 150MHz
- Weight :
- 4.535924g
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2.5W
- Contact Plating :
- Tin
- Test Current :
- 5mA
- Max Collector Current :
- 4A
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- Terminal Form :
- Flat
- Collector Emitter Voltage (VCEO) :
- 80V
- Height :
- 6.35mm
- Element Configuration :
- Single
- Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Collector Base Voltage (VCBO) :
- 80V
- Length :
- 12.7mm
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- PBSS4480
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 150MHz
- REACH SVHC :
- No SVHC
- Width :
- 6.35mm
- Max Power Dissipation :
- 550mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2003
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Zener Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 80V
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 80V
- Termination :
- SMD/SMT
- Datasheets
- PBSS4480X,135
PBSS4480X,135 Documents
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4480X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS4480X,135 Features
the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4480X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4480X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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