PBSS4480X,135
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- Mfr.Part #
- PBSS4480X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- PBSS4480X - 80 V, 4 A NPN LOW VC
- Stock
- 3,684
- In Stock ：
- 3,684
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 2.5W
- Packaging :
- Tape and Reel (TR)
- Weight :
- 4.535924g
- Polarity/Channel Type :
- NPN
- Power - Max :
- 1.6W
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Length :
- 12.7mm
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- hFE Min :
- 250
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Termination :
- SMD/SMT
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transition Frequency :
- 150MHz
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2003
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 80V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 4A
- Transistor Application :
- SWITCHING
- Zener Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Frequency :
- 150MHz
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Max Power Dissipation :
- 550mW
- Base Part Number :
- PBSS4480
- Width :
- 6.35mm
- Height :
- 6.35mm
- Factory Lead Time :
- 4 Weeks
- Test Current :
- 5mA
- Max Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Gain Bandwidth Product :
- 150MHz
- Datasheets
- PBSS4480X,135
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4480X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS4480X,135 Features
the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4480X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4480X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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