PBSS4480X,135
- Mfr.Part #
- PBSS4480X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- PBSS4480X - 80 V, 4 A NPN LOW VC
- Stock
- 3,684
- In Stock :
- 3,684
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Width :
- 6.35mm
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Length :
- 12.7mm
- Base Part Number :
- PBSS4480
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Zener Voltage :
- 30V
- Pin Count :
- 3
- Power - Max :
- 1.6W
- Radiation Hardening :
- No
- Max Collector Current :
- 4A
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 2.5W
- Max Power Dissipation :
- 550mW
- Frequency :
- 150MHz
- Height :
- 6.35mm
- Termination :
- SMD/SMT
- Gain Bandwidth Product :
- 150MHz
- hFE Min :
- 250
- Polarity/Channel Type :
- NPN
- Test Current :
- 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 80V
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Weight :
- 4.535924g
- Published :
- 2003
- Terminal Form :
- Flat
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-243AA
- Number of Pins :
- 3
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Transition Frequency :
- 150MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- PBSS4480X,135
PBSS4480X,135 Documents

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4480X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS4480X,135 Features
the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4480X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4480X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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