PBSS4480X,135
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- Mfr.Part #
- PBSS4480X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- PBSS4480X - 80 V, 4 A NPN LOW VC
- Stock
- 3,684
- In Stock ：
- 3,684
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA
- Test Current :
- 5mA
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transition Frequency :
- 150MHz
- Contact Plating :
- Tin
- Width :
- 6.35mm
- Base Part Number :
- PBSS4480
- Max Collector Current :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 550mW
- Collector Emitter Breakdown Voltage :
- 80V
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- hFE Min :
- 250
- Mount :
- Surface Mount
- Zener Voltage :
- 30V
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Length :
- 12.7mm
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Published :
- 2003
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Frequency :
- 150MHz
- Case Connection :
- COLLECTOR
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 80V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Height :
- 6.35mm
- Package / Case :
- TO-243AA
- Collector Base Voltage (VCBO) :
- 80V
- Pin Count :
- 3
- Power - Max :
- 1.6W
- Power Dissipation :
- 2.5W
- Datasheets
- PBSS4480X,135
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4480X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS4480X,135 Features
the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4480X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4480X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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