PBSS4480X,135
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- Mfr.Part #
- PBSS4480X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- PBSS4480X - 80 V, 4 A NPN LOW VC
- Stock
- 3,684
- In Stock ：
- 3,684
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Power Dissipation :
- 2.5W
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Width :
- 6.35mm
- Pin Count :
- 3
- Terminal Form :
- Flat
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Height :
- 6.35mm
- Test Current :
- 5mA
- Gain Bandwidth Product :
- 150MHz
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 550mW
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Frequency :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 80V
- hFE Min :
- 250
- Length :
- 12.7mm
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2003
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Contact Plating :
- Tin
- Termination :
- SMD/SMT
- JESD-609 Code :
- e3
- Power - Max :
- 1.6W
- Weight :
- 4.535924g
- Transition Frequency :
- 150MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Max Collector Current :
- 4A
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Base Part Number :
- PBSS4480
- Zener Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 80V
- Datasheets
- PBSS4480X,135
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4480X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS4480X,135 Features
the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4480X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4480X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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