PBSS4350Z,135

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Mfr.Part #
PBSS4350Z,135
Manufacturer
Nexperia
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 50V 3A SOT223
Stock
269,512
In Stock :
269,512

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
4 Weeks
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 2A 2V
Collector Emitter Breakdown Voltage :
50V
Published :
2001
Number of Terminations :
4
Radiation Hardening :
No
Max Breakdown Voltage :
50V
Number of Elements :
1
Current - Collector Cutoff (Max) :
100nA ICBO
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Case Connection :
COLLECTOR
Polarity/Channel Type :
NPN
Transistor Type :
NPN
Transition Frequency :
100MHz
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Width :
3.7mm
Time@Peak Reflow Temperature-Max (s) :
30
Collector Emitter Voltage (VCEO) :
50V
Package / Case :
TO-261-4, TO-261AA
Vce Saturation (Max) @ Ib, Ic :
290mV @ 200mA, 2A
Weight :
4.535924g
Collector Base Voltage (VCBO) :
60V
Max Power Dissipation :
2W
Pin Count :
4
Base Part Number :
PBSS4350
Collector Emitter Saturation Voltage :
290mV
Operating Temperature :
150°C TJ
Lead Free :
Lead Free
Terminal Position :
Dual
Length :
6.7mm
Emitter Base Voltage (VEBO) :
6V
REACH SVHC :
No SVHC
Frequency :
100MHz
Mount :
Surface Mount
Height :
1.7mm
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Max Collector Current :
3A
Power Dissipation :
2W
JESD-30 Code :
R-PDSO-G4
Terminal Form :
Gull wing
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Gain Bandwidth Product :
100MHz
Packaging :
Tape and Reel (TR)
Datasheets
PBSS4350Z,135
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS4350Z,135 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, Base Part Number:PBSS4350, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, PBSS4350Z,135 pinout, PBSS4350Z,135 datasheet PDF, PBSS4350Z,135 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS4350Z,135 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS4350Z,135


NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PBSS4350Z,135 Overview


In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 290mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 290mV @ 200mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

PBSS4350Z,135 Features


the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


PBSS4350Z,135 Applications


There are a lot of Nexperia USA Inc.
PBSS4350Z,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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