PBSS4350Z,135
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- Mfr.Part #
- PBSS4350Z,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT223
- Stock
- 269,512
- In Stock ：
- 269,512
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 50V
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Height :
- 1.7mm
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PDSO-G4
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 290mV
- Package / Case :
- TO-261-4, TO-261AA
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 3.7mm
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- PBSS4350
- Weight :
- 4.535924g
- Pin Count :
- 4
- Published :
- 2001
- Length :
- 6.7mm
- Datasheets
- PBSS4350Z,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS4350Z,135 Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 290mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 290mV @ 200mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS4350Z,135 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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