PBSS4350Z,135
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- Mfr.Part #
- PBSS4350Z,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT223
- Stock
- 269,512
- In Stock ：
- 269,512
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2001
- Frequency :
- 100MHz
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Gain Bandwidth Product :
- 100MHz
- Length :
- 6.7mm
- Collector Emitter Voltage (VCEO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Number of Terminations :
- 4
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 3A
- Base Part Number :
- PBSS4350
- Weight :
- 4.535924g
- Power Dissipation :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 290mV
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.7mm
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Pin Count :
- 4
- Collector Emitter Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Width :
- 3.7mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-30 Code :
- R-PDSO-G4
- Datasheets
- PBSS4350Z,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS4350Z,135 Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 290mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 290mV @ 200mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS4350Z,135 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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