PBSS4350Z,135
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- Mfr.Part #
- PBSS4350Z,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT223
- Stock
- 269,512
- In Stock ：
- 269,512
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Mount :
- Surface Mount
- Width :
- 3.7mm
- JESD-30 Code :
- R-PDSO-G4
- Transistor Type :
- NPN
- Base Part Number :
- PBSS4350
- Max Collector Current :
- 3A
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- Pin Count :
- 4
- Published :
- 2001
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Number of Terminations :
- 4
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Max Power Dissipation :
- 2W
- Terminal Finish :
- Tin (Sn)
- Length :
- 6.7mm
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- 290mV
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 6V
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- Max Breakdown Voltage :
- 50V
- Height :
- 1.7mm
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Datasheets
- PBSS4350Z,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS4350Z,135 Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 290mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 290mV @ 200mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS4350Z,135 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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