PBSS4350Z,135
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- Mfr.Part #
- PBSS4350Z,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT223
- Stock
- 269,512
- In Stock ：
- 269,512
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Pin Count :
- 4
- Width :
- 3.7mm
- JESD-30 Code :
- R-PDSO-G4
- Length :
- 6.7mm
- Terminal Form :
- Gull wing
- Power Dissipation :
- 2W
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 50V
- Weight :
- 4.535924g
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2001
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Max Power Dissipation :
- 2W
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 290mV
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Gain Bandwidth Product :
- 100MHz
- Height :
- 1.7mm
- Transistor Element Material :
- SILICON
- Base Part Number :
- PBSS4350
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Datasheets
- PBSS4350Z,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS4350Z,135 Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 290mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 290mV @ 200mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS4350Z,135 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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