PBSS4350Z,135
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- Mfr.Part #
- PBSS4350Z,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT223
- Stock
- 269,512
- In Stock ：
- 269,512
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2001
- Number of Terminations :
- 4
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Width :
- 3.7mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 2W
- Pin Count :
- 4
- Base Part Number :
- PBSS4350
- Collector Emitter Saturation Voltage :
- 290mV
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Length :
- 6.7mm
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- No SVHC
- Frequency :
- 100MHz
- Mount :
- Surface Mount
- Height :
- 1.7mm
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 3A
- Power Dissipation :
- 2W
- JESD-30 Code :
- R-PDSO-G4
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PBSS4350Z,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS4350Z,135 Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 290mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 290mV @ 200mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS4350Z,135 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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