PBSS4350X,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA

Transistor Application :

SWITCHING

Package / Case :

TO-243AA

Factory Lead Time :

4 Weeks

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

50V

Power Dissipation :

1.6W

Number of Pins :

4

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

30

Collector Base Voltage (VCBO) :

50V

Max Power Dissipation :

1.6W

Gain Bandwidth Product :

100MHz

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Published :

2003

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-F3

Terminal Finish :

Tin (Sn)

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Frequency :

100MHz

Base Part Number :

PBSS4350

Vce Saturation (Max) @ Ib, Ic :

370mV @ 300mA, 3A

Transition Frequency :

100MHz

Lead Free :

Lead Free

Max Collector Current :

3A

Radiation Hardening :

No

Number of Terminations :

3

Transistor Type :

NPN

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

JESD-609 Code :

e3

ECCN Code :

EAR99