PBSS4350X,115

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Mfr.Part #
PBSS4350X,115
Manufacturer
Nexperia
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 50V 3A SOT89
Stock
763,082
In Stock :
763,082

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 1A 2V
Transition Frequency :
100MHz
Terminal Finish :
Tin (Sn)
Current - Collector (Ic) (Max) :
3A
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
370mV @ 300mA, 3A
Time@Peak Reflow Temperature-Max (s) :
30
Number of Terminations :
3
Case Connection :
COLLECTOR
Base Part Number :
PBSS4350
Transistor Element Material :
SILICON
Power - Max :
1.6W
Published :
2003
Transistor Type :
NPN
Number of Pins :
3
Polarity/Channel Type :
NPN
Transistor Application :
SWITCHING
Operating Temperature :
150°C TJ
Voltage - Collector Emitter Breakdown (Max) :
50V
Configuration :
Single
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
4 Weeks
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Terminal Position :
Single
Package / Case :
TO-243AA
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA
Surface Mount :
yes
Terminal Form :
Flat
Frequency - Transition :
100MHz
Datasheets
PBSS4350X,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS4350X,115 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:PBSS4350, Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-243AA, Mounting Type:Surface Mount, PBSS4350X,115 pinout, PBSS4350X,115 datasheet PDF, PBSS4350X,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS4350X,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS4350X,115


NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

PBSS4350X,115 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 370mV @ 300mA, 3A.A transition frequency of 100MHz is present in the part.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.

PBSS4350X,115 Features


the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 370mV @ 300mA, 3A
a transition frequency of 100MHz


PBSS4350X,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4350X,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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