PBSS4350T,215
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- Mfr.Part #
- PBSS4350T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A TO236AB
- Stock
- 324,459
- In Stock ：
- 324,459
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 2A
- Lead Free :
- Lead Free
- Length :
- 6.35mm
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 300mW
- Collector Base Voltage (VCBO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 300
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Width :
- 6.35mm
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 4.535924g
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Height :
- 6.35mm
- Power Dissipation :
- 1.2W
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 300mA, 3A
- Base Part Number :
- PBSS4350
- Power - Max :
- 540mW
- Collector Emitter Voltage (VCEO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Operating Temperature :
- 150°C TJ
- Published :
- 2002
- JESD-609 Code :
- e3
- Datasheets
- PBSS4350T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4350T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 370mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4350T,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4350T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4350T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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