PBSS4350SPN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Pins :

8

Base Part Number :

PBSS4350SPN

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V / 180 @ 1A 2V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Published :

2007

Max Power Dissipation :

1.43W

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Time-Max (ton) :

104ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

50V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Pin Count :

8

ECCN Code :

EAR99

Transistor Type :

NPN, PNP

Max Breakdown Voltage :

50V

Power Dissipation :

1.43W

Max Collector Current :

2.7A

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Power - Max :

750mW

Number of Elements :

2

Mount :

Surface Mount

Number of Terminations :

8

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

100nA

Collector Emitter Breakdown Voltage :

50V

Polarity :

NPN, PNP

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e4