PBSS4350SPN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Base Part Number :

PBSS4350SPN

Element Configuration :

Dual

Transistor Type :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V / 180 @ 1A 2V

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

50V

Collector Base Voltage (VCBO) :

50V

Published :

2007

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Power - Max :

750mW

Max Collector Current :

2.7A

Max Power Dissipation :

1.43W

Max Breakdown Voltage :

50V

Power Dissipation :

1.43W

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

8

JESD-609 Code :

e4

Polarity :

NPN, PNP

Pin Count :

8

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Vce Saturation (Max) @ Ib, Ic :

340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Time-Max (ton) :

104ns

Lead Free :

Lead Free

Number of Pins :

8

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Current - Collector Cutoff (Max) :

100nA

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Transistor Element Material :

SILICON

Mount :

Surface Mount