PBSS4350S,126
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- Mfr.Part #
- PBSS4350S,126
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A TO92-3
- Stock
- 32,541
- In Stock ：
- 32,541
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Power Dissipation-Max (Abs) :
- 0.83W
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Surface Mount :
- No
- Published :
- 2009
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Power - Max :
- 830mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Frequency - Transition :
- 100MHz
- Transistor Type :
- NPN
- Base Part Number :
- PBSS4350
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Current - Collector (Ic) (Max) :
- 3A
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PBSS4350S,126
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PBSS4350S,126 Overview
This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 290mV @ 200mA, 2A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
PBSS4350S,126 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
a transition frequency of 100MHz
PBSS4350S,126 Applications
There are a lot of NXP USA Inc.
PBSS4350S,126 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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