PBSS4350D,135
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- Mfr.Part #
- PBSS4350D,135
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A 6TSOP
- Stock
- 251,317
- In Stock ：
- 251,317
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Pin Count :
- 6
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 4 Weeks
- Terminal Position :
- Dual
- Number of Terminations :
- 6
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 750mW
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 3A
- ECCN Code :
- EAR99
- Power - Max :
- 750mW
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Package / Case :
- SC-74, SOT-457
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 50V
- Base Part Number :
- PBSS4350
- Number of Pins :
- 6
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Finish :
- Tin (Sn)
- Published :
- 2007
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- PBSS4350D,135
PBSS4350D,135 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS4350D,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 290mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
PBSS4350D,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350D,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350D,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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