PBSS4350D,135
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- Mfr.Part #
- PBSS4350D,135
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A 6TSOP
- Stock
- 251,317
- In Stock ：
- 251,317
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Number of Pins :
- 6
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 3A
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Lead Free :
- Lead Free
- Package / Case :
- SC-74, SOT-457
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 6
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- PBSS4350
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Power - Max :
- 750mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 6
- Operating Temperature :
- 150°C TJ
- Published :
- 2007
- Max Power Dissipation :
- 750mW
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PBSS4350D,135
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS4350D,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 290mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
PBSS4350D,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350D,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350D,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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