PBSS4350D,135
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- Mfr.Part #
- PBSS4350D,135
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A 6TSOP
- Stock
- 251,317
- In Stock ：
- 251,317
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 3A
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-74, SOT-457
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Power - Max :
- 750mW
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 50V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Transition Frequency :
- 100MHz
- Published :
- 2007
- Number of Pins :
- 6
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 750mW
- Number of Terminations :
- 6
- Transistor Type :
- NPN
- Pin Count :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- PBSS4350
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PBSS4350D,135
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS4350D,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 290mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
PBSS4350D,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350D,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350D,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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