PBSS4350D,135
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- Mfr.Part #
- PBSS4350D,135
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A 6TSOP
- Stock
- 251,317
- In Stock ：
- 251,317
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Package / Case :
- SC-74, SOT-457
- Power - Max :
- 750mW
- Max Collector Current :
- 3A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Published :
- 2007
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 750mW
- Max Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Number of Terminations :
- 6
- Number of Pins :
- 6
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- PBSS4350
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 6
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Datasheets
- PBSS4350D,135
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS4350D,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 290mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
PBSS4350D,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350D,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350D,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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