PBSS4350D,135
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- Mfr.Part #
- PBSS4350D,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS4350D - SMALL S
- Stock
- 251,317
- In Stock ：
- 251,317
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- SC-74, SOT-457
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 6
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 50V
- Max Collector Current :
- 3A
- Power - Max :
- 750mW
- Transistor Type :
- NPN
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 750mW
- Number of Pins :
- 6
- Transistor Element Material :
- SILICON
- Base Part Number :
- PBSS4350
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2007
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 6
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Collector Emitter Voltage (VCEO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PBSS4350D,135
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS4350D,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 290mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
PBSS4350D,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350D,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350D,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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