PBSS4350D,135
- Mfr.Part #
- PBSS4350D,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS4350D - SMALL S
- Stock
- 251,317
- In Stock :
- 251,317
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 750mW
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 3A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 50V
- Published :
- 2007
- Base Part Number :
- PBSS4350
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 6
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Number of Pins :
- 6
- Element Configuration :
- Single
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 6
- JESD-609 Code :
- e3
- Power - Max :
- 750mW
- Package / Case :
- SC-74, SOT-457
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Datasheets
- PBSS4350D,135
PBSS4350D,135 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS4350D,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 290mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
PBSS4350D,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350D,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350D,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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