PBSS4350D,135

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Mfr.Part #
PBSS4350D,135
Manufacturer
NXP Semiconductors
Package / Case
SC-74, SOT-457
Datasheet
Download
Description
NOW NEXPERIA PBSS4350D - SMALL S
Stock
251,317
In Stock :
251,317

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
750mW
Emitter Base Voltage (VEBO) :
6V
Transistor Application :
SWITCHING
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
50V
Time@Peak Reflow Temperature-Max (s) :
40
Max Collector Current :
3A
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Base Voltage (VCBO) :
60V
Packaging :
Tape and Reel (TR)
Max Breakdown Voltage :
50V
Published :
2007
Base Part Number :
PBSS4350
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Number of Terminations :
6
Mount :
Surface Mount
Polarity/Channel Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 2A 2V
Number of Pins :
6
Element Configuration :
Single
Number of Elements :
1
ECCN Code :
EAR99
Transistor Type :
NPN
Peak Reflow Temperature (Cel) :
260
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
50V
Gain Bandwidth Product :
100MHz
Terminal Finish :
Tin (Sn)
Pin Count :
6
JESD-609 Code :
e3
Power - Max :
750mW
Package / Case :
SC-74, SOT-457
Terminal Position :
Dual
Factory Lead Time :
4 Weeks
Terminal Form :
Gull wing
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
290mV @ 200mA, 2A
Lead Free :
Lead Free
Transition Frequency :
100MHz
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4350D,135 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:PBSS4350, Mounting Type:Surface Mount, Number of Terminations:6, Number of Pins:6, Package / Case:SC-74, SOT-457, Operating Temperature:150°C TJ, PBSS4350D,135 pinout, PBSS4350D,135 datasheet PDF, PBSS4350D,135 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4350D,135 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS4350D,135


NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount

PBSS4350D,135 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 290mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.

PBSS4350D,135 Features


the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


PBSS4350D,135 Applications


There are a lot of Nexperia USA Inc.
PBSS4350D,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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