PBSS4350D,125
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- Mfr.Part #
- PBSS4350D,125
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A 6TSOP
- Stock
- 2,865
- In Stock ：
- 2,865
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Number of Pins :
- 6
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 750mW
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- hFE Min :
- 200
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Terminations :
- 6
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Max Collector Current :
- 3A
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- PBSS4350
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Pin Count :
- 6
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Package / Case :
- SC-74, SOT-457
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 750mW
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2009
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PBSS4350D,125
PBSS4350D,125 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS4350D,125 Overview
DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 290mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.
PBSS4350D,125 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350D,125 Applications
There are a lot of Nexperia USA Inc.
PBSS4350D,125 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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