PBSS4350D,125
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- Mfr.Part #
- PBSS4350D,125
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A 6TSOP
- Stock
- 2,865
- In Stock ：
- 2,865
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 50V
- Base Part Number :
- PBSS4350
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 3A
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 6
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 750mW
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- hFE Min :
- 200
- Number of Pins :
- 6
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Frequency :
- 100MHz
- Pin Count :
- 6
- Element Configuration :
- Single
- Package / Case :
- SC-74, SOT-457
- Max Power Dissipation :
- 750mW
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 50V
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Datasheets
- PBSS4350D,125
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS4350D,125 Overview
DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 290mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.
PBSS4350D,125 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350D,125 Applications
There are a lot of Nexperia USA Inc.
PBSS4350D,125 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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