PBSS4350D,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

PBSS4350

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

Terminal Position :

Dual

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

6V

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

3A

Terminal Finish :

Tin (Sn)

Power Dissipation :

750mW

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Frequency :

100MHz

Gain Bandwidth Product :

100MHz

Collector Base Voltage (VCBO) :

60V

Factory Lead Time :

4 Weeks

Transition Frequency :

100MHz

Max Power Dissipation :

750mW

Operating Temperature :

150°C TJ

Weight :

4.535924g

Number of Elements :

1

Max Breakdown Voltage :

50V

Transistor Type :

NPN

Published :

2007

Radiation Hardening :

No

Height :

6.35mm

Vce Saturation (Max) @ Ib, Ic :

290mV @ 200mA, 2A

Transistor Element Material :

SILICON

Package / Case :

SC-74, SOT-457

Number of Pins :

6

Lead Free :

Lead Free

Pin Count :

6

Current - Collector Cutoff (Max) :

100nA ICBO

hFE Min :

100

Width :

6.35mm

Length :

6.35mm

Transistor Application :

SWITCHING

Mount :

Surface Mount

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

50V