PBSS4330X,115
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- Mfr.Part #
- PBSS4330X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A SOT89
- Stock
- 50,100
- In Stock ：
- 50,100
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 1A 2V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Number of Pins :
- 4
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 1.6W
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Saturation Voltage :
- 300mV
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 3A
- Power Dissipation :
- 1.6W
- Weight :
- 4.535924g
- Base Part Number :
- PBSS4330
- JESD-30 Code :
- R-PSSO-F3
- Height :
- 1.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- Pin Count :
- 3
- Package / Case :
- TO-243AA
- Published :
- 2003
- Length :
- 4.6mm
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Form :
- Flat
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 30V
- Width :
- 2.6mm
- Max Collector Current :
- 3A
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Datasheets
- PBSS4330X,115
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4330X,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 3A volts.
PBSS4330X,115 Features
the DC current gain for this device is 270 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4330X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4330X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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