PBSS4260PANP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency - Transition :

140MHz

Base Part Number :

PBSS4260

Transistor Application :

SWITCHING

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Operating Temperature :

150°C TJ

Transition Frequency :

140MHz

Collector Emitter Saturation Voltage :

-100mV

Transistor Element Material :

SILICON

Power Dissipation :

2W

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

90mV @ 50mA, 500mA

Power - Max :

510mW

Max Collector Current :

3A

Emitter Base Voltage (VEBO) :

7V

Mounting Type :

Surface Mount

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

60V

Number of Pins :

6

JESD-609 Code :

e3

Max Power Dissipation :

1.45W

Package / Case :

6-UDFN Exposed Pad

Polarity :

NPN, PNP

Packaging :

Cut Tape (CT)

Factory Lead Time :

8 Weeks

Gain Bandwidth Product :

100MHz

Collector Base Voltage (VCBO) :

60V

Number of Elements :

2

Current - Collector (Ic) (Max) :

2A

Published :

2012

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN, PNP

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6