PBSS4260PANP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

-100mV

Transistor Element Material :

SILICON

Element Configuration :

Dual

Polarity :

NPN, PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

3A

Pin Count :

6

Radiation Hardening :

No

Current - Collector (Ic) (Max) :

2A

Power - Max :

510mW

Number of Elements :

2

Base Part Number :

PBSS4260

Mount :

Surface Mount

JESD-609 Code :

e3

Package / Case :

6-UDFN Exposed Pad

Transistor Type :

NPN, PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Vce Saturation (Max) @ Ib, Ic :

90mV @ 50mA, 500mA

Packaging :

Cut Tape (CT)

Max Power Dissipation :

1.45W

Number of Terminations :

6

Transition Frequency :

140MHz

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

60V

Frequency - Transition :

140MHz

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

7V

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Gain Bandwidth Product :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2W

Collector Base Voltage (VCBO) :

60V

Published :

2012