PBSS4260PANP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Max Power Dissipation :

1.45W

Terminal Finish :

Tin (Sn)

Frequency - Transition :

140MHz

Package / Case :

6-UDFN Exposed Pad

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

Current - Collector Cutoff (Max) :

100nA ICBO

Gain Bandwidth Product :

100MHz

Number of Pins :

6

Transition Frequency :

140MHz

Power Dissipation :

2W

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

90mV @ 50mA, 500mA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

7V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Polarity :

NPN, PNP

Published :

2012

Max Collector Current :

3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Collector Emitter Saturation Voltage :

-100mV

Collector Base Voltage (VCBO) :

60V

Packaging :

Cut Tape (CT)

Collector Emitter Voltage (VCEO) :

60V

Operating Temperature :

150°C TJ

Base Part Number :

PBSS4260

Case Connection :

COLLECTOR

Current - Collector (Ic) (Max) :

2A

Power - Max :

510mW

Transistor Type :

NPN, PNP