PBSS4260PANP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

90mV @ 50mA, 500mA

Frequency - Transition :

140MHz

Transistor Element Material :

SILICON

Polarity :

NPN, PNP

Collector Emitter Saturation Voltage :

-100mV

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

7V

Number of Elements :

2

Power - Max :

510mW

Collector Base Voltage (VCBO) :

60V

Base Part Number :

PBSS4260

Collector Emitter Voltage (VCEO) :

60V

Published :

2012

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Package / Case :

6-UDFN Exposed Pad

Operating Temperature :

150°C TJ

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Max Collector Current :

3A

Power Dissipation :

2W

Transistor Application :

SWITCHING

Pin Count :

6

Radiation Hardening :

No

Case Connection :

COLLECTOR

Gain Bandwidth Product :

100MHz

Transistor Type :

NPN, PNP

Transition Frequency :

140MHz

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Current - Collector Cutoff (Max) :

100nA ICBO

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Factory Lead Time :

8 Weeks

Max Power Dissipation :

1.45W

Mount :

Surface Mount

Current - Collector (Ic) (Max) :

2A