PBSS4260PAN
- Mfr.Part #
- PBSS4260PAN
- Manufacturer
- NXP Semiconductors
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS4260PAN - SMALL
- Stock
- 35,284
- In Stock :
- 35,284
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 140MHz
- Collector Emitter Voltage (VCEO) :
- 350mV
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Transistor Type :
- 2 NPN (Dual)
- Reference Standard :
- AEC-Q101; IEC-60134
- Factory Lead Time :
- 8 Weeks
- Transition Frequency :
- 140MHz
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 370mW
- Package / Case :
- 6-UDFN Exposed Pad
- Mount :
- Surface Mount
- Power - Max :
- 370mW
- JESD-30 Code :
- S-PDSO-N6
- Configuration :
- SEPARATE, 2 ELEMENTS
- Number of Terminations :
- 6
- Number of Elements :
- 2
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Terminal Form :
- NO LEAD
- Published :
- 2015
- Series :
- Automotive, AEC-Q101
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1A 2V
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Datasheets
- PBSS4260PAN

PBSS4260PANSX datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at
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