PBSS4260PAN,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Pins :

6

Power - Max :

510mW

Emitter Base Voltage (VEBO) :

7V

Collector Emitter Voltage (VCEO) :

60V

RoHS Status :

ROHS3 Compliant

Package / Case :

6-UDFN Exposed Pad

Transition Frequency :

140MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

Radiation Hardening :

No

Packaging :

Cut Tape (CT)

Max Collector Current :

3A

Collector Base Voltage (VCBO) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

70mV

Current - Collector (Ic) (Max) :

2A

Mount :

Surface Mount

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

90mV @ 50mA, 500mA

Mounting Type :

Surface Mount

Number of Terminations :

6

Element Configuration :

Dual

Transistor Type :

2 NPN (Dual)

Base Part Number :

PBSS4260

Case Connection :

COLLECTOR

Pin Count :

6

Max Power Dissipation :

1.45W

Number of Elements :

2

hFE Min :

290

Terminal Finish :

Tin (Sn)

Polarity :

NPN

Published :

2012

Gain Bandwidth Product :

140MHz