PBSS4260PAN,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Base Voltage (VCBO) :

60V

JESD-609 Code :

e3

hFE Min :

290

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Transition Frequency :

140MHz

Emitter Base Voltage (VEBO) :

7V

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Base Part Number :

PBSS4260

Max Power Dissipation :

1.45W

Number of Pins :

6

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Pin Count :

6

Collector Emitter Saturation Voltage :

70mV

Terminal Finish :

Tin (Sn)

Published :

2012

Case Connection :

COLLECTOR

Number of Elements :

2

Power - Max :

510mW

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

90mV @ 50mA, 500mA

Gain Bandwidth Product :

140MHz

Transistor Application :

SWITCHING

Element Configuration :

Dual

Package / Case :

6-UDFN Exposed Pad

Max Collector Current :

3A

Packaging :

Cut Tape (CT)

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

60V

Current - Collector (Ic) (Max) :

2A