PBSS4250X,135
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- Mfr.Part #
- PBSS4250X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A SOT89
- Stock
- 217,825
- In Stock ：
- 217,825
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Collector Emitter Voltage (VCEO) :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Base Part Number :
- PBSS4250
- hFE Min :
- 300
- Terminal Form :
- Flat
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Published :
- 2009
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 100nA
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSSO-F3
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1W
- Package / Case :
- TO-243AA
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Number of Pins :
- 4
- Max Breakdown Voltage :
- 50V
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Datasheets
- PBSS4250X,135
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4250X,135 Overview
This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 320mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 2A volts is possible.
PBSS4250X,135 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4250X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4250X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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