PBSS4250X,135
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- Mfr.Part #
- PBSS4250X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A SOT89
- Stock
- 217,825
- In Stock ：
- 217,825
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 50V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- Package / Case :
- TO-243AA
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Pins :
- 4
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 1W
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSSO-F3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2009
- Radiation Hardening :
- No
- Base Part Number :
- PBSS4250
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Max Collector Current :
- 2A
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1W
- hFE Min :
- 300
- Mount :
- Surface Mount
- Frequency :
- 100MHz
- Datasheets
- PBSS4250X,135
PBSS4250X,135 Documents
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4250X,135 Overview
This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 320mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 2A volts is possible.
PBSS4250X,135 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4250X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4250X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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