PBSS4250X,115
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- Mfr.Part #
- PBSS4250X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A SOT89
- Stock
- 17,800
- In Stock ：
- 17,800
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Radiation Hardening :
- No
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Published :
- 2003
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Base Part Number :
- PBSS4250
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Case Connection :
- COLLECTOR
- Height :
- 1.6mm
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 1W
- Max Power Dissipation :
- 1W
- Length :
- 4.6mm
- Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 2A
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Width :
- 2.6mm
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Weight :
- 4.535924g
- Collector Emitter Saturation Voltage :
- 380mV
- REACH SVHC :
- No SVHC
- Datasheets
- PBSS4250X,115
PBSS4250X,115 Documents
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4250X,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 380mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4250X,115 Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 380mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4250X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4250X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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