PBSS4250X,115
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- Mfr.Part #
- PBSS4250X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A SOT89
- Stock
- 17,800
- In Stock ：
- 17,800
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Max Collector Current :
- 2A
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- Height :
- 1.6mm
- Power Dissipation :
- 1W
- Collector Emitter Saturation Voltage :
- 380mV
- Gain Bandwidth Product :
- 100MHz
- Length :
- 4.6mm
- Current - Collector Cutoff (Max) :
- 100nA
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- Max Breakdown Voltage :
- 50V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Weight :
- 4.535924g
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Power Dissipation :
- 1W
- Published :
- 2003
- Element Configuration :
- Single
- Terminal Form :
- Flat
- Base Part Number :
- PBSS4250
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Width :
- 2.6mm
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 50V
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Datasheets
- PBSS4250X,115
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4250X,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 380mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4250X,115 Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 380mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4250X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4250X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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