PBSS4240Y,115
- Mfr.Part #
- PBSS4240Y,115
- Manufacturer
- Nexperia
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS NPN 40V 2A 6TSSOP
- Stock
- 87,600
- In Stock :
- 87,600
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 6
- Weight :
- 4.535924g
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- PBSS4240
- Power Dissipation :
- 430mW
- Collector Emitter Breakdown Voltage :
- 40V
- Length :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 230MHz
- Width :
- 6.35mm
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Lead Free :
- Lead Free
- Number of Terminations :
- 6
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Published :
- 2001
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Frequency :
- 230MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 2A
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Gain Bandwidth Product :
- 230MHz
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 6
- Collector Emitter Voltage (VCEO) :
- 40V
- Height :
- 6.35mm
- Max Power Dissipation :
- 430mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Datasheets
- PBSS4240Y,115
PBSS4240Y,115 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
PBSS4240Y,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 230MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 2A volts at its maximum.
PBSS4240Y,115 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4240Y,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4240Y,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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