PBSS4240Y,115
- Mfr.Part #
- PBSS4240Y,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- NEXPERIA PBSS4240Y - SMALL SIGNA
- Stock
- 87,600
- In Stock :
- 87,600
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 40V
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 230MHz
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 40V
- Height :
- 6.35mm
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 230MHz
- Max Collector Current :
- 2A
- Frequency :
- 230MHz
- Power Dissipation :
- 430mW
- Width :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 6
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Max Power Dissipation :
- 430mW
- Weight :
- 4.535924g
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Length :
- 6.35mm
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- PBSS4240
- Published :
- 2001
- Collector Base Voltage (VCBO) :
- 40V
- Pin Count :
- 6
- Datasheets
- PBSS4240Y,115

NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
PBSS4240Y,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 230MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 2A volts at its maximum.
PBSS4240Y,115 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4240Y,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4240Y,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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