PBSS4240Y,115

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Mfr.Part #
PBSS4240Y,115
Manufacturer
NXP Semiconductors
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
NEXPERIA PBSS4240Y - SMALL SIGNA
Stock
87,600
In Stock :
87,600

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 1A 2V
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
40V
Packaging :
Tape and Reel (TR)
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
40
Frequency :
230MHz
Emitter Base Voltage (VEBO) :
5V
Max Power Dissipation :
430mW
Length :
6.35mm
Polarity/Channel Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Operating Temperature :
150°C TJ
Mounting Type :
Surface Mount
Gain Bandwidth Product :
230MHz
Height :
6.35mm
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
320mV @ 200mA, 2A
Max Collector Current :
2A
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Number of Pins :
6
Transistor Type :
NPN
Collector Base Voltage (VCBO) :
40V
Base Part Number :
PBSS4240
Factory Lead Time :
4 Weeks
Published :
2001
Terminal Position :
Dual
Number of Terminations :
6
Terminal Form :
Gull wing
Transition Frequency :
230MHz
Weight :
4.535924g
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Power Dissipation :
430mW
Collector Emitter Breakdown Voltage :
40V
Pin Count :
6
Package / Case :
6-TSSOP, SC-88, SOT-363
Max Breakdown Voltage :
40V
Element Configuration :
Single
REACH SVHC :
No SVHC
Current - Collector Cutoff (Max) :
100nA ICBO
Width :
6.35mm
Terminal Finish :
Tin (Sn)
Datasheets
PBSS4240Y,115
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4240Y,115 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Pins:6, Base Part Number:PBSS4240, Number of Terminations:6, Package / Case:6-TSSOP, SC-88, SOT-363, PBSS4240Y,115 pinout, PBSS4240Y,115 datasheet PDF, PBSS4240Y,115 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4240Y,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS4240Y,115


NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount

PBSS4240Y,115 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 230MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 2A volts at its maximum.

PBSS4240Y,115 Features


the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz


PBSS4240Y,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4240Y,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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