PBSS4240Y,115
- Mfr.Part #
- PBSS4240Y,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- NEXPERIA PBSS4240Y - SMALL SIGNA
- Stock
- 87,600
- In Stock :
- 87,600
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Transition Frequency :
- 230MHz
- Base Part Number :
- PBSS4240
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Element Configuration :
- Single
- Published :
- 2001
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 230MHz
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 40V
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Max Power Dissipation :
- 430mW
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 430mW
- Frequency :
- 230MHz
- Factory Lead Time :
- 4 Weeks
- Weight :
- 4.535924g
- Number of Pins :
- 6
- Pin Count :
- 6
- Max Collector Current :
- 2A
- Mount :
- Surface Mount
- Number of Terminations :
- 6
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 40V
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Terminal Finish :
- Tin (Sn)
- Length :
- 6.35mm
- Width :
- 6.35mm
- Height :
- 6.35mm
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Datasheets
- PBSS4240Y,115

NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
PBSS4240Y,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 230MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 2A volts at its maximum.
PBSS4240Y,115 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4240Y,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4240Y,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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