PBSS4240Y,115

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Mfr.Part #
PBSS4240Y,115
Manufacturer
NXP Semiconductors
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
NEXPERIA PBSS4240Y - SMALL SIGNA
Stock
87,600
In Stock :
87,600

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Max Breakdown Voltage :
40V
Factory Lead Time :
4 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 1A 2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
6
Transistor Type :
NPN
ECCN Code :
EAR99
Gain Bandwidth Product :
230MHz
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
40V
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Package / Case :
6-TSSOP, SC-88, SOT-363
Number of Elements :
1
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Finish :
Tin (Sn)
Collector Emitter Voltage (VCEO) :
40V
Height :
6.35mm
Packaging :
Tape and Reel (TR)
Transition Frequency :
230MHz
Max Collector Current :
2A
Frequency :
230MHz
Power Dissipation :
430mW
Width :
6.35mm
Vce Saturation (Max) @ Ib, Ic :
320mV @ 200mA, 2A
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Number of Terminations :
6
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
Max Power Dissipation :
430mW
Weight :
4.535924g
Mounting Type :
Surface Mount
Mount :
Surface Mount
Element Configuration :
Single
REACH SVHC :
No SVHC
Operating Temperature :
150°C TJ
Radiation Hardening :
No
Length :
6.35mm
Terminal Form :
Gull wing
Time@Peak Reflow Temperature-Max (s) :
40
Emitter Base Voltage (VEBO) :
5V
Base Part Number :
PBSS4240
Published :
2001
Collector Base Voltage (VCBO) :
40V
Pin Count :
6
Datasheets
PBSS4240Y,115
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4240Y,115 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Package / Case:6-TSSOP, SC-88, SOT-363, Number of Terminations:6, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Base Part Number:PBSS4240, PBSS4240Y,115 pinout, PBSS4240Y,115 datasheet PDF, PBSS4240Y,115 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4240Y,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS4240Y,115


NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount

PBSS4240Y,115 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 230MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 2A volts at its maximum.

PBSS4240Y,115 Features


the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz


PBSS4240Y,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4240Y,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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