PBSS4240Y,115
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- Mfr.Part #
- PBSS4240Y,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- NEXPERIA PBSS4240Y - SMALL SIGNA
- Stock
- 87,600
- In Stock ：
- 87,600
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 230MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 430mW
- Length :
- 6.35mm
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 230MHz
- Height :
- 6.35mm
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Max Collector Current :
- 2A
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Number of Pins :
- 6
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 40V
- Base Part Number :
- PBSS4240
- Factory Lead Time :
- 4 Weeks
- Published :
- 2001
- Terminal Position :
- Dual
- Number of Terminations :
- 6
- Terminal Form :
- Gull wing
- Transition Frequency :
- 230MHz
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Power Dissipation :
- 430mW
- Collector Emitter Breakdown Voltage :
- 40V
- Pin Count :
- 6
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Max Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 6.35mm
- Terminal Finish :
- Tin (Sn)
- Datasheets
- PBSS4240Y,115
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
PBSS4240Y,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 230MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 2A volts at its maximum.
PBSS4240Y,115 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4240Y,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4240Y,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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