PBSS4240XF
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- Mfr.Part #
- PBSS4240XF
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- NEXPERIA PBSS4240X - 40 V, 2 A U
- Stock
- 24,121
- In Stock ：
- 24,121
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-243AA
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2A
- Collector Emitter Voltage (VCEO) :
- 140mV
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 40V
- Max Operating Temperature :
- 150°C
- Collector Emitter Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2012
- Current - Collector (Ic) (Max) :
- 2A
- Mounting Type :
- Surface Mount
- hFE Min :
- 300
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 4
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Saturation Voltage :
- 510mV
- Max Power Dissipation :
- 500mW
- Frequency - Transition :
- 150MHz
- Collector Base Voltage (VCBO) :
- 40V
- Supplier Device Package :
- SOT-89
- Power - Max :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 140mV @ 50mA, 500mA
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 150MHz
- Base Part Number :
- PBSS4240
- Polarity :
- NPN
- Datasheets
- PBSS4240XF
NPN 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount
PBSS4240XF Overview
In this device, the DC current gain is 300 @ 500mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 510mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 140mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 40V volts.Product comes in the supplier's device package SOT-89.There is a 40V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS4240XF Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 510mV
the vce saturation(Max) is 140mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-89
PBSS4240XF Applications
There are a lot of Nexperia USA Inc.
PBSS4240XF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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